2011

Evidence: Well-supported for the IBM device papers. Display ledes attached to a mixer are speculation.

RF

Wu, Lin, Bol, Jenkins, Xia, Farmer, Zhu, Avouris (IBM), Nature 472, 74 (2011) — top-gated CVD graphene RF FETs on diamond-like carbon; gates to 40 nm; f_T to 155 GHz. Different route from the 2010 SiC 100 GHz result.

Circuit

June 2011: IBM graphene frequency mixer on silicon (Science circuit paper). Mixing shown to about 10 GHz. First widely cited circuit, not a phone SoC.

Company start

The Sixth Element (Changzhou) founded 2011 in company/IDTechEx trails. GO/rGO powder house. [[topics/manufacturing/east-asia]] · [[logs/companies]]

Policy

FET Flagship shortlist is public. Launch is still 2013.

How to read GHz

f_T is not a 32 nm CMOS node. Graphene RF is a measurement. “Replaces silicon this decade” is not.

[[timeline/2010]] · [[timeline/2012]]